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Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics
Joint Authors
Novkovski, Nenad
Atanassova, Elena
Source
Advances in Materials Science and Engineering
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-11, 11 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-05-28
Country of Publication
Egypt
No. of Pages
11
Abstract EN
Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits complicated behaviour when voltage and frequency dependencies are studied.
From our study on metal (Al, Au, W)–Ta2O5/SiO2–Si structures, we identify serial C-R measurement mode to be more convenient for use than the parallel one usually used in characterization of similar structures.
Strong frequency dependence that is not due to real variations in the dielectric permittivity of the layers is observed.
Very high capacitance at low frequencies is due to the leakage in Ta2O5 layer.
We found that the above observation is mainly due to different leakage current mechanisms in the two different layers composing the stack.
The effect is highly dependent on the applied voltage, since the leakage currents are strongly nonlinear functions of the electric field in the layers.
Additionally, at low frequencies, transition currents influence the measured value of the capacitance.
From the capacitance measurements several parameters are extracted, such as capacitance in accumulation, effective dielectric constant, and oxide charges.
Extracting parameters of the studied structures by standard methods in the case of high-κ/interfacial layer stacks can lead to substantial errors.
Some cases demonstrating these deficiencies of the methods are presented and solutions for obtaining better results are proposed.
American Psychological Association (APA)
Novkovski, Nenad& Atanassova, Elena. 2017. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-11.
https://search.emarefa.net/detail/BIM-1125134
Modern Language Association (MLA)
Novkovski, Nenad& Atanassova, Elena. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-11.
https://search.emarefa.net/detail/BIM-1125134
American Medical Association (AMA)
Novkovski, Nenad& Atanassova, Elena. Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-11.
https://search.emarefa.net/detail/BIM-1125134
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1125134