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Low-Power CMOS Integrated Hall Switch Sensor
Joint Authors
Wei, Rongshan
Guo, Shizhong
Yang, Shanzhi
Source
Active and Passive Electronic Components
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-11-07
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
This paper presents an integrated Hall switch sensor based on SMIC 0.18 µm CMOS technology.
The system includes a front-end Hall element and a back-end signal processing circuit.
By optimizing the structure of the Hall element and using the orthogonal coupling and spinning current technology, the offset voltage can be suppressed effectively.
The simulation results showed that the Hall switch can eliminate offset voltage greater than 1 mV at 3.3 V supply voltage.
Two modes of the Hall switch circuit, the awake mode and the sleep mode, were realized by using clock logic signals without compromising the performance of the Hall switch, thereby reducing power consumption.
The test results showed that the operate point and the release point of the switch were within the range of 3–7 mT at 3.3 V supply voltage.
Meanwhile, the current consumption is 7.89 µA.
American Psychological Association (APA)
Wei, Rongshan& Guo, Shizhong& Yang, Shanzhi. 2017. Low-Power CMOS Integrated Hall Switch Sensor. Active and Passive Electronic Components،Vol. 2017, no. 2017, pp.1-9.
https://search.emarefa.net/detail/BIM-1125334
Modern Language Association (MLA)
Wei, Rongshan…[et al.]. Low-Power CMOS Integrated Hall Switch Sensor. Active and Passive Electronic Components No. 2017 (2017), pp.1-9.
https://search.emarefa.net/detail/BIM-1125334
American Medical Association (AMA)
Wei, Rongshan& Guo, Shizhong& Yang, Shanzhi. Low-Power CMOS Integrated Hall Switch Sensor. Active and Passive Electronic Components. 2017. Vol. 2017, no. 2017, pp.1-9.
https://search.emarefa.net/detail/BIM-1125334
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1125334