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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4SiO2 Gate Dielectrics
Joint Authors
Source
Active and Passive Electronic Components
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-10-15
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer.
Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer.
Dielectric oxidation temperature dependent TID effects are also studied.
Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature.
Gate bias during irradiation leads to different VTH shift for different gate dielectrics.
Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.
American Psychological Association (APA)
Mo, J.& Zhao, Xuran& Zhou, Min. 2017. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4SiO2 Gate Dielectrics. Active and Passive Electronic Components،Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1125350
Modern Language Association (MLA)
Mo, J.…[et al.]. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4SiO2 Gate Dielectrics. Active and Passive Electronic Components No. 2017 (2017), pp.1-7.
https://search.emarefa.net/detail/BIM-1125350
American Medical Association (AMA)
Mo, J.& Zhao, Xuran& Zhou, Min. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4SiO2 Gate Dielectrics. Active and Passive Electronic Components. 2017. Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1125350
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1125350