Valency-Based Descriptors for Silicon Carbides, Bismuth(III)‎ Iodide, and Dendrimers in Drug Applications

Abstract EN

Silicon carbide (SiC), also called carborundum, is a semiconductor containing silicon and carbon.

Dendrimers are repetitively branched molecules that are typically symmetric around the core and often adopt a spherical three-dimensional morphology.

Bismuth(III) iodide is an inorganic compound with the formula BiI3.

This gray-black solid is the product of the reaction between bismuth and iodine, which once was of interest in qualitative inorganic analysis.

In chemical graph theory, we associate a graph to a compound and compute topological indices that help us in guessing properties of the understudy compound.

A topological index is the graph invariant number, calculated from a graph representing a molecule.

Most of the proposed topological indices are related either to a vertex adjacency relationship (atom-atom connectivity) in the graph or to topological distances in the graph.

In this paper, we aim to compute the first and second Gourava indices and hyper-Gourava indices for silicon carbides, bismuth(III) iodide, and dendrimers.