Thermal Transport in Silicon-Germanium Superlattices at Low Temperatures
Joint Authors
Wang, Zan
Cai, Xingyu
Mao, Tiezhu
Source
Issue
Vol. 2019, Issue 2019 (31 Dec. 2019), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2019-10-15
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
Interfacial thermal resistances between heterogeneous materials are still a challengeable subject since the mechanism to explain it quantitatively is not clear in spite of its importance.
We propose a Monte Carlo (MC) model to study phonon interfacial elastic and inelastic scattering behaviors for superlattices composed of Si and Ge materials, which substantially reduces the amount of computations.
In particular, below Debye temperatures, the molecular dynamics (MD) solution is not precise enough for semiconductors because of quantization errors.
In this work, thermal conductivities and thermal rectifications of Si/Ge and Ge/Si superlattices with different periods are investigated separately at temperatures below 200 K.
American Psychological Association (APA)
Wang, Zan& Cai, Xingyu& Mao, Tiezhu. 2019. Thermal Transport in Silicon-Germanium Superlattices at Low Temperatures. Journal of Nanomaterials،Vol. 2019, no. 2019, pp.1-9.
https://search.emarefa.net/detail/BIM-1182571
Modern Language Association (MLA)
Wang, Zan…[et al.]. Thermal Transport in Silicon-Germanium Superlattices at Low Temperatures. Journal of Nanomaterials No. 2019 (2019), pp.1-9.
https://search.emarefa.net/detail/BIM-1182571
American Medical Association (AMA)
Wang, Zan& Cai, Xingyu& Mao, Tiezhu. Thermal Transport in Silicon-Germanium Superlattices at Low Temperatures. Journal of Nanomaterials. 2019. Vol. 2019, no. 2019, pp.1-9.
https://search.emarefa.net/detail/BIM-1182571
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1182571