Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon
Author
Source
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-09-06
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements.
The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds) taking into account the gap (in mA/cm2) for each corresponding voltage.
The in situ I-V measurements were made at different pore depth/time, at the electrolyte-pore tip interface, while etching takes place based on p-type Si.
The results showed increasing, decreasing, and constant I-V gap in time, for macropores, nanopores, and electropolishing regimes, respectively.
This was related to the expected diffusion limitation of oxide forming (H2O) molecules reaching the electrolyte-pore tip and the anodizing current, while etching takes place.
The method can be developed further and has the potential to be applied in other electrochemically etched porous semiconductor materials.
American Psychological Association (APA)
Benor, Amare. 2017. Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon. Journal of Nanomaterials،Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1183841
Modern Language Association (MLA)
Benor, Amare. Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon. Journal of Nanomaterials No. 2017 (2017), pp.1-7.
https://search.emarefa.net/detail/BIM-1183841
American Medical Association (AMA)
Benor, Amare. Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon. Journal of Nanomaterials. 2017. Vol. 2017, no. 2017, pp.1-7.
https://search.emarefa.net/detail/BIM-1183841
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1183841