Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

Abstract EN

A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires.

Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction.

The ITO-film device is stable with a low-leakage current.

Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers.

The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors.

We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs.

Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.