Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer
Joint Authors
Chuang, Chiashain
Ochiai, Yuichi
Aoki, Nobuyuki
Liang, Chi-Te
Wu, Bi-Yi
Mineharu, M.
Matsumoto, N.
Matsunaga, M.
Liu, C.-W.
Kim, Gil-Ho
Lin, L.-H.
Watanabe, K.
Taniguchi, T.
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-05-14
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
We investigate the energy relaxation of hot carriers in a CVD-grown graphene device with a top h-BN layer by driving the devices into the nonequilibrium regime.
By using the magnetic field dependent conductance fluctuations of our graphene device as a self-thermometer, we can determine the effective carrier temperature T e at various driving currents I while keeping the lattice temperature T L fixed.
Interestingly, it is found that T e is proportional to I, indicating little electron-phonon scattering in our device.
Furthermore the average rate of energy loss per carrier P e is proportional to ( T e 2 - T L 2 ), suggesting the heat diffusion rather than acoustic phonon processes in our system.
The long energy relaxation times due to the weak electron-phonon coupling in CVD graphene capped with h-BN layer as well as in exfoliated multilayer graphene can find applications in hot carrier graphene-based devices.
American Psychological Association (APA)
Chuang, Chiashain& Mineharu, M.& Matsumoto, N.& Matsunaga, M.& Liu, C.-W.& Wu, Bi-Yi…[et al.]. 2018. Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194288
Modern Language Association (MLA)
Chuang, Chiashain…[et al.]. Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer. Journal of Nanomaterials No. 2018 (2018), pp.1-7.
https://search.emarefa.net/detail/BIM-1194288
American Medical Association (AMA)
Chuang, Chiashain& Mineharu, M.& Matsumoto, N.& Matsunaga, M.& Liu, C.-W.& Wu, Bi-Yi…[et al.]. Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-7.
https://search.emarefa.net/detail/BIM-1194288
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1194288