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Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study
Joint Authors
Guo, Meng
Sun, Haocheng
Shang, Yuan
Yang, Yanmei
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-01-30
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
Phosphorene becomes an important member of the layered nanomaterials since its discovery for the fabrication of nanodevices.
In the experiments, pristine phosphorene shows p-type semiconducting with no exception.
To reach its full capability, n-type semiconducting is a necessity.
Here, we report the electronic structure engineering of phosphorene by surface metal atom doping.
Five metal elements, Cu, Ag, Au, Li, and Na, have been considered which could form stable adsorption on phosphorene.
These elements show patterns in their electron configuration with one valence electron in their outermost s-orbital.
Among three group 11 elements, Cu can induce n-type degenerate semiconducting, while Ag and Au can only introduce localized impurity states.
The distinct ability of Cu, compared to Ag and Au, is mainly attributed to the electronegativity.
Cu has smaller electronegativity and thus denotes its electron to phosphorene, upshifting the Fermi level towards conduction band, resulting in n-type semiconducting.
Ag and Au have larger electronegativity and hardly transfer electrons to phosphorene.
Parallel studies of Li and Na doping support these findings.
In addition, Cu doping effectively regulates the work function of phosphorene, which gradually decreases upon increasing Cu concentration.
It is also interesting that Au can hardly change the work function of phosphorene.
American Psychological Association (APA)
Sun, Haocheng& Shang, Yuan& Yang, Yanmei& Guo, Meng. 2018. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study. Journal of Nanomaterials،Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1194614
Modern Language Association (MLA)
Sun, Haocheng…[et al.]. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study. Journal of Nanomaterials No. 2018 (2018), pp.1-9.
https://search.emarefa.net/detail/BIM-1194614
American Medical Association (AMA)
Sun, Haocheng& Shang, Yuan& Yang, Yanmei& Guo, Meng. Realization of N-Type Semiconducting of Phosphorene through Surface Metal Doping and Work Function Study. Journal of Nanomaterials. 2018. Vol. 2018, no. 2018, pp.1-9.
https://search.emarefa.net/detail/BIM-1194614
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1194614