Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films
Author
Source
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-04-24
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Information Technology and Computer Science
Abstract EN
SnO2 thin films grown directly on the Si substrate had larger average grain sizes as the power intensity increased, but the average grain size of the SnO2 thin films grown in oxygen atmosphere decreased as the power intensity increased.
Hall measurement of pure SnO2 thin films showed that the carrier density increased with increasing power.
However, upon annealing the SnO2 thin films, the carrier density decreased with increasing power owing to the formation of oxygen vacancies and the SiO2 layer between the Si substrate and SnO2 thin films.
The photoluminescence (PL) of the SnO2 thin film grown in the oxygen atmosphere changed, and it was affected by the oxygen defects at the surface and interfaces of the thin film.
American Psychological Association (APA)
Jeong, Jin. 2018. Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films. Scanning،Vol. 2018, no. 2018, pp.1-5.
https://search.emarefa.net/detail/BIM-1212920
Modern Language Association (MLA)
Jeong, Jin. Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films. Scanning No. 2018 (2018), pp.1-5.
https://search.emarefa.net/detail/BIM-1212920
American Medical Association (AMA)
Jeong, Jin. Study on the Effect of Oxygen Defects on the Electrical and Optical Properties of Thin Films. Scanning. 2018. Vol. 2018, no. 2018, pp.1-5.
https://search.emarefa.net/detail/BIM-1212920
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1212920