A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology
Joint Authors
Source
Wireless Communications and Mobile Computing
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-03-29
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Information Technology and Computer Science
Abstract EN
This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications.
The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies.
The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies.
A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power.
Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.
American Psychological Association (APA)
Zhao, Dixian& Yi, Yongran. 2018. A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications and Mobile Computing،Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1216286
Modern Language Association (MLA)
Zhao, Dixian& Yi, Yongran. A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications and Mobile Computing No. 2018 (2018), pp.1-6.
https://search.emarefa.net/detail/BIM-1216286
American Medical Association (AMA)
Zhao, Dixian& Yi, Yongran. A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications and Mobile Computing. 2018. Vol. 2018, no. 2018, pp.1-6.
https://search.emarefa.net/detail/BIM-1216286
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1216286
