Simulation of the influence of environmental factors on the performance of 3C-SiC solar cells

Abstract EN

In this paper, a doped 3C-SiC with two dopant materials, Al and Cr to obtain p and n type semiconductors respectively, was used as a basic component in the solar cell structure which was used in the current study.

The present study examined the impact of the main environmental conditions (temperature and light intensity) on the PIN solar cell.

Simulation was accomplished for different levels of illumination from (250 to 1200) W.m-2 and temperature from (300 to 400) K.

The results revealed that illumination has a great impact on the current of the circuit, where the current of the short circuit JSC increases linearly with increasing the level of intensity.

The results show that the temperature has a sever influence on the voltage of the cell.

The voltage of the open circuit VOC considerably decreases due to the decrement in current of saturation that reduces directly with an increase in temperature.