تأثير زمن التنميش على مورفولوجية سطوح زرنيخيد الغاليوم المنتجة بطريقة التنميش الكيميائي الضوئي باستخدام ضوء الشمس

Abstract EN

Porous gallium arsenide has been prepared from wafers of crystalline gallium arsenide type (n-type) with crystallographic orientation (111) and resistivity (0.00245 Ω-cm) by photochemical etching using sunlight as a light source to distinguish it from its other industrial sources such as different light bulbs (Halogen lamp, Tungsten lamp) and the various light sources in laser.

The effect of etching time on surface morphology of GaAs was studied by atomic force microscope (AFM).

The results showed the possibility of obtaining layers of porous gallium arsenide of different surface nature when changing the etching times (50 min, 40 min, 30 min) and the constancy of acid concentration at (HF 40 %) and illumination intensity at (8901 mw / cm2) porous layers are formed with thicknesses (31.70 nm, 30.13 nm, 15.28 nm) and with average diameters of granules and nanoparticles (64.31 nm, 98.73 nm, 80.26 nm) respectively.

Both the surface roughness and the thickness of the porous layer of the prepared wafers increased when the etching time increased and decreased when the etching time decreased.

It has been found that the production of nanoporous gallium arsenide structures is essential to obtain a surface with distinctive specifications for use in photoelectrons devices and solar cells.