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Modeling of field emission from laser etched porous silicon
Author
Source
Issue
Vol. 50, Issue 3 B (31 Jul. 2023), pp.1-11, 11 p.
Publisher
Kuwait University Academic Publication Council
Publication Date
2023-07-31
Country of Publication
Kuwait
No. of Pages
11
Main Subjects
Abstract EN
In many modern sciences, electron transfer is required, such as electron microscopes, microwaves, and screens.
There have been numerous reports of the formation of microstructures on silicon surfaces using lasers in halogen-containing media and their optical, electrical and other physical properties.
A silicon microstructured field emitter is modeled with Fowler-Nortium field diffusion theory, and the breakdown currents are consistent.
Breakdown voltage, field gain coefficient, current and current density, and emitter region (in case of breakdown) are considered in the simulation.
Comparison between simulation and experimental results shows that the microstructure has field emitter properties and can be used as a new field emitter.
American Psychological Association (APA)
Dehghanpour, H. R.. 2023. Modeling of field emission from laser etched porous silicon. Kuwait Journal of Science،Vol. 50, no. 3 B, pp.1-11.
https://search.emarefa.net/detail/BIM-1500041
Modern Language Association (MLA)
Dehghanpour, H. R.. Modeling of field emission from laser etched porous silicon. Kuwait Journal of Science Vol. 50, no. 3 B (Jul. 2023), pp.1-11.
https://search.emarefa.net/detail/BIM-1500041
American Medical Association (AMA)
Dehghanpour, H. R.. Modeling of field emission from laser etched porous silicon. Kuwait Journal of Science. 2023. Vol. 50, no. 3 B, pp.1-11.
https://search.emarefa.net/detail/BIM-1500041
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 8-11
Record ID
BIM-1500041