Measurements accuracy and modeling reliability of GaN HEMTs

Abstract EN

In this paper, an important factors for accurate modeling of GaN HEMT is presented.

Measurement uncertainty and frequency range as rules of thumb for reliable extraction of the small-signal model parameter is demonstrated.

Determining the optimal pinch-off bias condition as a key point for reliable extraction of the reactive extrinsic parameters of the model is also investigated.

The results of this study, which is carried out on high-power large size (in the order of 1mm gate width) devices, shows that the mentioned three points should be considered in the modeling procedure