10x10 cm2 multicrystallin silicon solar cells realized with H3 PO4-2 butanol emulasion as phosphorous doping source

Abstract EN

N + p emitter on 10x10 multi crystalline silicon (mc-si) wafers has been realized with phosphoric acid (l /) PO./) as a doping source.

The dopant emulsion was prepared with a mixture of 2-butanol organic solvent and IfjPO /.

Several experiments were carried out to optimizing the composition of the emulsion.

Using the spin-on deposit process a uniform layer was elaborated on lite mc-si substrates.

FTIR measurements show the presence of phosphor (P) atoms in organic and mineral species.

Drive-in step of phosphorous atoms was carried out in an open tube furnace at different temperatures and times, n—p emitters with S to 35 Q / squarv sheet resistance values were obtained.

The front and rear metallic contacts were screen printed using silver and aluminum pastes in a co-firing process.

Electrical performances under standards conditions give: 21.2 A /cm2, 576 mV and 8.56% of current density, open circuit voltage and efficiency respectively.

These performances increase up to (12-13) %.

By using an antirejlecli on-pass ivales layer of silicon nitride (SitNj).