An Analytical I-V characteristics model for Au-AlxGa1-xAs GaAs VMT heterojunctions based on non-linear charge-control and field-dependent mobility formulations
Author
Source
Issue
Vol. 5, Issue 2 (30 Sep. 2009), pp.1-7, 7 p.
Publisher
University of Thi-Qar Research and Development Department
Publication Date
2009-09-30
Country of Publication
Iraq
No. of Pages
7
Main Subjects
Abstract EN
The velocity modulation transistor (VMT) has two channels with differing velocities.
Small vertical distance between these channels can be achieved using epitaxial growth, opening the opportunity for higher speed than any other heterostructure field-effect transistor (FET).
The non-linear charge-control formulation of the two-dimensional electron gas (2DEG) sheet carriers concentration (ns), which consider the variation of ns with Fermi-potential in the triangular potential quantum well of the VMT, has led to a bias-dependent effective offset distance of the 2DEG from the heterointerface.
The consideration of variable 2DEG offset distance pushes the model characterization to great accuracy then the linear characterization does.
Based on non-linear charge-control and a single set of analytical expressions for field-dependent mobility formulations for AlxGa1-xAs/GaAs heterostructure, we developed an analytical I-V characteristics model for VMT device.
This model incorporates effects of both composition (x) and doping concentration (Nd) dependences.
The model is suitable for computer aided design (CAD) applications in the analysis, design, and optimization of microwave and digital VMT devices.
American Psychological Association (APA)
Wazeer, H. N.. 2009. An Analytical I-V characteristics model for Au-AlxGa1-xAs GaAs VMT heterojunctions based on non-linear charge-control and field-dependent mobility formulations. University of Thi-Qar Journal،Vol. 5, no. 2, pp.1-7.
https://search.emarefa.net/detail/BIM-254344
Modern Language Association (MLA)
Wazeer, H. N.. An Analytical I-V characteristics model for Au-AlxGa1-xAs GaAs VMT heterojunctions based on non-linear charge-control and field-dependent mobility formulations. University of Thi-Qar Journal Vol. 5, no. 2 (Sep. 2009), pp.1-7.
https://search.emarefa.net/detail/BIM-254344
American Medical Association (AMA)
Wazeer, H. N.. An Analytical I-V characteristics model for Au-AlxGa1-xAs GaAs VMT heterojunctions based on non-linear charge-control and field-dependent mobility formulations. University of Thi-Qar Journal. 2009. Vol. 5, no. 2, pp.1-7.
https://search.emarefa.net/detail/BIM-254344
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references.
Record ID
BIM-254344