Carrier life time, time constant, and other related detector parameter for porous silicon silicon heterojunction detector

Abstract EN

In the present work, Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in laser induced electrical etching process.

Were a (800 nm), (1watt) semiconductor laser has been used with the electrochemical etching process to prepare the porous layer on the surface of (111) n-type silicon substrate.

Two different Silicon resistivities of (0.564,4.29).cm was employed to prepared (Ps / Si) heterojunction at different preparation condition.

The characteristic of the prepared device has been found to depend directly on the formation current density and substrate resistivity.

The obtained device has good parameter to work as a detector in the (V- NIR) region .