Effect of hf concentration on the ps structures prepared by photoelectrochemical etching

Abstract EN

Porous silicon was fabricated at p-n junction wafer by photo electrochemical (PEC) etching.

Silicon wafer with various electrolyte containing different HF concentrations was used to explain PS formation by the reaction at the Si / electrolyte interface.

An investigation of the dependence on HF concentration to formed PS layer was made.

The surface morphology of PS layer was study as a function of HF concentration.

Pillar like structures are formed at low HF concentration and pores structures are obtained a at higher HF concentration (40%).

The etching rate increases with increasing HF concentration causing faster silicon dissolution.

Thus the total pillar volume would increase by increasing the HF concentration.