The structural and electroonic properties of gan undehigh pressure
Joint Authors
Source
Annales des Sciences et Technologie
Issue
Vol. 2, Issue 1 (30 Jun. 2010), pp.19-26, 8 p.
Publisher
University Kasdi Merbah Ouargla
Publication Date
2010-06-30
Country of Publication
Algeria
No. of Pages
8
Main Subjects
Topics
Abstract EN
The structural phase transformations of GaN under high-pressure are studied using the full-potential linearized augmented plane wave (FP-LAPW) approaches within the density functional formalism (DFT) in the local density approximation (LDA) and the generalized gradient approximation (GGA).
We have calculated the ground-state energy, the lattice constant, the bulk modulus, its pressure derivative, and the electronic structure of the wurtzite (WZ), zinc-blende (ZB) and rocksalt (RS) phases of GaN.
The GGA results of the critical pressure of the WZ→ZB and WZ→RS transitions present small but non negligible variations with respect to the LDA results.
The RS-GaN is predicted to be an indirect band gap semiconductor, with a band gap of 1.68 eV.
American Psychological Association (APA)
Dawudi, Bahamed& Bukra, Umar. 2010. The structural and electroonic properties of gan undehigh pressure. Annales des Sciences et Technologie،Vol. 2, no. 1, pp.19-26.
https://search.emarefa.net/detail/BIM-267129
Modern Language Association (MLA)
Dawudi, Bahamed& Bukra, Umar. The structural and electroonic properties of gan undehigh pressure. Annales des Sciences et Technologie Vol. 2, no. 1 (Jun. 2010), pp.19-26.
https://search.emarefa.net/detail/BIM-267129
American Medical Association (AMA)
Dawudi, Bahamed& Bukra, Umar. The structural and electroonic properties of gan undehigh pressure. Annales des Sciences et Technologie. 2010. Vol. 2, no. 1, pp.19-26.
https://search.emarefa.net/detail/BIM-267129
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 25-26
Record ID
BIM-267129