Microcavity length role on the characteristic temperature and the properties of quantum dot laser

Abstract EN

Quantum-dot laser devices contain micro cavity length which initially populates the properties of quantum dot lasers (QDLs).

We studied the influence upon the optical confinement layer free carriers density, confined carrier level occupancies in QDs, threshold current density, internal loss coefficient, characteristic temperature, the maximum operating temperature and QD lowest excitation energy.

Our results have been calculated as functions of limit structure parameters of GaInAsP / InP QDL with wavelength of 1.55 µm.

The QDL characteristic temperature was studied with the effective cross section and sets an upper limit certain temperature for operating temperature of a QD laser.