Theoretical model for ion diffusion and segregation during ion implantation in nano-meter scale heterostructures

Abstract EN

An entrance to diffusion and segregation in nano-meter scale hetetostructures is developed In this work.

A useful introduction about heterostructures is given with important related effects are presented.

A preliminary note is declared throughout the segregation process is discussed.

Extended theoretical treatment concerned with the extension to multilayer structures is drived.

One of the most important extension is the three-layer structure which extendedly studied and applied to B in Si1- xGex/Si1-yGey/Si heterostructure.

The concentration depth profiles are calculated and many important effects are discussed.