Effect of annealing temperature on the electrical conductivity of amorphous InAs thin films

Abstract EN

In this research the electrical conductivity measurements were made on the amorphous In As films prepared by thermal evaporation method in thickness 450 nm and annealed in different temperatures in the range (303- 573) K.

The electrical conductivity (σ) showed a decreasing trend with the increasing annealing temperature, while the activation energies (Ea1, Ea2) showed an opposite trend, where the activation energies are increased with the annealing temperature.