Preparation and characterization OFN-CDSEP-SI photo detector using rapid thermal

Dissertant

Khamis, Husayn T.

University

University of Technology

Faculty

-

Department

Department of Laser Engineering and Electronic Optics

University Country

Iraq

Degree

Master

Degree Date

2006

English Abstract

In this work n-Cedes / p-Si photo detector was fabricated by using a rapid thermal alloying technique.

This was achieved when a thin film of case deposited on a glass and n or p type mono crystalline silicon substrates.

The electrical, optical and structural properties of the prepared films were studied at different conditions under fixed temperature and at variable annealing time.

The spectral response of the photodector shows that the absorption region lies between (400- 950 nm).

From the comparison of the samples used to fabricate the photo detector at different annealing time ( 15, 35, 45, 60 min) at constant temperature 500O the results analysis shows that the best annealing time was 60 min at incident power equal to 33mw.

The crystal structure of the prepared samples was studied by using the x-ray diffraction technique.

From the data analysis we notice that the dominant phase was n-case at annealing time (14min) and at a temperature of 105C" at radiation power 150 watt.

The conversion efficiency of the fabricated photo detector was (17.5 %) at wavelength of 650 nm at different illumination conditions.

The results showed that the best radiation power was 30 mw.

The surface morphology of the prepared and annealed specimens was studied by using optical microscope.

Main Subjects

Physics

Topics

• Temperatures
• Electrical properties
• Optical properties

• APA
• MLA
• AMA

Language

English

Data Type

Arab Theses

Record ID

BIM-305675