Efficiency enhoncement of single crystal silicon solar cells

Dissertant

Hadid, Akram Abd al-Amir

University

University of Technology

Faculty

-

Department

Department of Electrical Engineering

University Country

Iraq

Degree

Master

Degree Date

2000

English Abstract

The single crystal silicon homojunction solar cells have been fabricated using the same fabrication sequence locally used; the oxide passivation process was applied to these cells under different temperatures and different times during fabrication sequence.

The resulting cells were then characterized using electrical and photovoltaic measurements.

The electrical measurements involve sheet resistivity, current- voltage and capacitance - voltage characteristics, while the photovoltaic measurements involve lifetime and spectral response measurements.

Efficiency enhancement was the prime objective of this work, as well as, the investigation of S1O2 layer grown by oxide passivation.

These were investigated by making comparison among different parameters of treated cells under different conditions with those of untreated cells.

Results of capacitance and life time measurements show increase in depletion layer width and diffusion length respectively, this will increase the volume of generation and subsequently increase photocurrent of the cell.

Results of current voltage characteristics show reduction in ideality factor and saturation current.

This will increase open circuit voltage of the cell.

Results of spectral response show increase over the entire spectrum particularly at the short wavelength indicating that there is an enhancement in surface response.

This mainly comes from advantages of Si02 layer to metal-silicon interface.

Efficiency measurements show increase in conversion efficiency of passivated cells with optimum value of 13.54 % as compared with 11.6 % of untreated ceils.

This optimum performance is realized under 800°C and 8 minute passivation condition.

Main Subjects

Electronic engineering

Topics

• Electrical properties
• Silicon
• Semiconductors

• APA
• MLA
• AMA

Language

English

Data Type

Arab Theses

Record ID

BIM-306219