Calculation of thermoelectric power and electron drift mobility at low electric field in AlxGa1-XN using an iterative method

Abstract EN

An iteration calculation has been carried out to study electron transport properties in AlxGa1-xN lattice-matched to GaN.

The two-mode nature of the polar optic phonons is considered jointly with deformation potential acoustic, piezoelectric, ionized impurity and alloy scattering.

Band non-parabolicity, admixture of p-functions, arbitrary degeneracy of the electron distribution and the screening effects of the free carriers on the scattering probabilities are incorporated.

Electron drift mobility and thermoelectric power are calculated for different temperature and doping dependencies.

It is found that the electron drift mobility decreases monotonically as the temperature increases from 100 K to 400 K.

The low temperature value of electron mobility is also found to decreases significantly with increasing doping concentration.

The agreement of iterative results with the available experimental data is found to be satisfactory.