Fabrication and study of memory cell switching properties based on Cu2S compound

Abstract EN

A variety of materials having large nonvolatile resistance change has been studied as potential candidates for next generation of non-volatile memory devices, in this device, information is stored as a change in resistance due to the formation of the metallic filament via the reduction of metal ions in the solid electrolyte.

Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm.

This paper presents experimental results for solid state devices based on copper sulfide (Cu2S) I-V characteristics.