Nano-scale core effects on electronic structure properties of gallium arsenide

Abstract EN

Ab–initio density function theory (DFT) calculations coupled with Large Unit Cell (LUC) method were carried out to evaluate the electronic structure properties of III-V zinc blend (GaAs).

The nano–scale that have dimension (1.56-2.04) nm.

The Gaussian 03 computational packages has been employed through out this study to compute the electronic properties include lattice constant, energy gap, valence and conduction band width, total energy, cohesive energy and density of state etc.

Results show that the total energy and energy gap are decreasing with increase the size of nano crystal.

Results revealed that electronic properties converge to some limit as the size of LUC increase.