Optoelectronic properties of CdSe Si heterojunction

Abstract EN

In this paper n-CdSe/p-Si heteroj unction photodetector was fabricated by thermal-evaporation te chnique of CdSe thin film grown onto single cry stalline Si substrate .

The e nergy gap of CdSe film was estimated from transmittance spectra and found to be (1.89 eV) .

The temperature dependenc e of Seebeck coefficient was studied .

The conductivity of CdSe thin film is n-ty pe and the value of activation energy is (0.59 eV).

Hete rojunction properties included dark and illuminated current-voltage(I-V ) and capacitance-voltage(C-V ) characte ristics.

From I-V plot, junction ideality factor for he terojunction was calculated to be 1.43, and providing information about the current transport mechanism.

The linear variation of the expe rimental curve C -2 vs.

V is indicative of the pre sence of abrupt heterojunction and it used to determine the experimental value of built-injunction potential V bi .

From illuminated I-V plot at different intensity le vels (90,180,240) mW/cm 2 , the linearity behavior of CdSe/Si heterojunction was investigated .