Influence of doping concentration on the main parameters of CdSe : Cu photoconductor detector

Abstract EN

The photonconductor detectors CdSe : Cu was fabricated as a thin film of (1 μm) in thickness using vacuum evaporation technique.

Doping with copper was made using vacuum annealing at 350oC under argon atmosphere.

The spectral responsivity and spectral detectivity of the detector were determined as a function of incident wavelength on the sample.

A remarkable improvement in performance was absorbed for the specimen, which doping with (1-5 wt %) Cu.

The spectral response increases with increasing of wavelength for incident radiation to maximum value, after that, it reduced sharply.

There is a shifting for peak responsivity indirect of higher wavelength.

The detectivity was increased with doping but its decreased as the concentration increases.

The value of detectivity, which obtained on it, is higher than early published value.