Nanocrystalline β-silicon carbide films prepared by TEACO2 laser

Abstract EN

Thin films of microcrystalline and nanocrystalline a-silicon carbide and silicon, where deposited on glass substrate with substrate temperature ranging from 350-400˚C, with deposition rate 0.5 nm per pulse, by laser induced chemical vapor deposition.

The deposition induced by TEACO2 laser.

The reactant gases (SiH4 and C2H4) photo decompose throughout collision associated multiple photon dissociate.

Such inhomogeneous film structure containing crystalline silicon, silicon carbide and amorphous silicon carbide matrix, give rise to a new type of material nanocry stalline silicon carbide in which the optical transmittance is governed by amorphous SiC phase while nanocry stalline grain are responsible for the conduction processes.

This new material is promised for many new applications, lick high efficiency solar cell.

X-ray diffraction patterns and scanning microscope images revealed that Nano crystalline SiC and Si films grew at substrate temperature above 400˚C, while completely amorphous films grew at substrate temperature 350˚C.