The effect of germanium content (x)‎ on the electrical properties of (Gex S1-x)‎ thin films

Abstract EN

Thin films of GexS1-x were fabricated by thermal evaporating under vacuum of 10-5 Toor on glass substrate.

The effect of increasing of germanium content (x) in sulfide films on the electrical properties like d.c conductivity (σ DC), concentration of charge carriers (nH) and the activation energy (Ea) and Hall effect were investigated.

The measurements show that (Ea) increases with the increasing of germanium content from 0.1 to 0.2 while it get to reduces with further addition, while charge carrier density (nH) is found to decrease and increase respectively with germanium content.

The results were explained in terms of creating and eliminating of states in the band gap.