Stimulated brillouin scattering in diffusive semiconductor plasmas

Abstract EN

Using the hydrodynamical model and following the coupled mode approach, the detailed analytical investigation of stimulated Brillouin scattering is made in an electrostrictive semiconductor.

The total induced current density including diffusion current density and the effective Brillouin susceptibility are obtained under offresonant laser irradiation.

The analysis deals with the qualitative behavior of the Brillouin gain and transmitted intensity with respect to excess doping concentration and pump intensity.

Efforts are directed towards optimizing the doping level and magnetic field to achieve maximum Brillouin gain at pump intensities much below the optical damage threshold level.

It is found that by irradiating a moderately doped semiconductor by a pump wave, one can achieve resonant enhancement of Brillouin gain provided the generated acoustic mode lies in the dispersionless regime.