Carrier excitation energies from a QD to OCL, RMS of relative QD-size fluctuations and temperature dependence of QDL

Abstract EN

In this work, we study the characteristic temperature of a quantum dot laser (QDL) in presence of internal optical loss and quantum efficiency.

The control parameters (the constant component of internal loss coefficient, effective cross section, carrier excitation energies from a QD to the optical confinement layer (OCL), and the root mean square (RMS) of relative QD-size fluctuations) are used for achieving free carrier density in the OCL and threshold current density and its component.