Atheoretical investigation of AlGaNGaN superlattice nanostructures using transfer matric method

Abstract EN

In this ork a theoretical investigation for studding the resonate tunneling in multibarrier semiconductor heterostructures (AlGaN / GaN) superlattice nanostructure has been presented.

The behavior of wave function intensity has been studied for superlattice structures, by solving SchrÖdinger time independent equation using Transfer Matrix Method (TMM).

TMM was used to find the eigen states.

The transmission coefficient was estimated in the case of resonant tunneling of electrons through the barriers in heterostructures.

From the obtained results it was found that the factors that affecting on the eigen states are barrier effective mass, barrier height and number of wells.

The results of the wave function intensity obtained in the present work are compared with Ref.