Optical properties of GaN thin flim

Abstract EN

GaN thin films were deposited by thermal evaporation onto glass substrates at substrate temperature of 403 K and a thickness of 385 nm.

GaN films have amorphous structure as shown in X-ray diffraction pattern.

From absorbance data within the range (200-900) nm direct optical energy gap was calculated.

Also the others optical parameters like transmittance T, reflectance R, refractive index n, extinction coefficient k, real dielectric constant ∈1, and imaginary dielectric constant ∈ 2 were determined.

GaN films have good absorbance and minimum transmittance in the region of the visible light.