Preparation cadmium telluride compound and study structural properties of thermal evaporation thin films

Abstract EN

Polycrystalline ingots of cadmium telluride have been synthesized using the direct reaction technique, by fusing initial component consisting from pure elements in stoichiometric ratio inside quartz ampoule is evacuated 10-6 torr cadmium telluride has been grown under temperature at (1070) oC for (16) hr.

was used in this study, the phases observed in growing CdTe compound depend on the temperature used during the growth process.

Crystallography studies to CdTe compound was determined by X-ray diffraction technique, which it has zinc blend structure and cubic unit cell, which lattice constants is a = 6.478 oA.