Electric characterization of hexaindium heptaselenide single crystals

Abstract EN

The electrical conductivity (σ) and Hall coefficient (RH) of monocrystals In6Se7 have been investigated over the temperature range 148-528 K.

The crystal was grown by a modified Bridgman technique.

The investigation showed that our samples are P-type conducting.

The forbidden energy gap was calculated and found to be 0.52 eV, whereas the ionization energy of the impurity level was 0.077 eV.

The values of the electrical conductivity, Hall coefficient and carrier concentration at room temperature, were 9.56 × 10–4 Ω–1 cm–1, 10.04 × 106 cm3 C–1 and 9.964 × 108 cm–3 respectively.

The Hall mobility at room temperature (μH), was found to be 13.1 × 103 cm2 V–1 S–1.

Also the dependence of the Hall mobility on temperature was presented graphically.