A novel 4-neuron hopfield ann using set technology

Abstract EN

Single Electron Tunneling (SET) technology introduces more potential for feature size reduction compared with well-established silicon-based CMOS technology.

The SET technology offers the ability to control the motion of individual electrons in the designed circuits.

In this paper, some of the basic Single Electron Circuits (SECs), found in the literature, are reviewed.

The complete schematic diagrams of these basic SECs (inc.

parameters for used devices) along with the corresponding simulation results (using the famous Monte Carlo simulator; SIMON 2.0) of these SEC are included.

Finally, a novel 4-neuron Hopfield ANN SEC is introduced.

The full design (inc.

detailed schematic diagram) and its SIMON 2 simulation results are included.