Study of the performance of ballistic carbone nanotube FETs
Joint Authors
Rechem, D.
Benkara, S.
Lamamra, K.
Source
Journal of New Technology and Materials / Larbi Ben M'hidi Oum el-Bouaghi University.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2011-12-31
Country of Publication
Algeria
No. of Pages
5
Main Subjects
Topics
English Abstract
Using a two-dimensional (2-D) simulation, we study the impact of varying the nanotube diameter and gate oxide thickness on the performance of a ballistic nanoscale carbon nanotube field effect transistor (CNTFET).
Our results show that the nanotube diameter influences the ION / IOFF current ratio; the drain induced barrier lowering (DIBL), the subthreshold slop as well as transconductance and drain conductance.
We also show that these device characteristics are affected by the gate oxide thickness.
Thus, nanotube diameter and gate oxide thickness must be carefully taken into account when designing robust logic circuits based on CNTFETs with potentially high parameter variability.
Data Type
Conference Papers
Record ID
BIM-367355
American Psychological Association (APA)
Rechem, D.& Benkara, S.& Lamamra, K.. 2011-12-31. Study of the performance of ballistic carbone nanotube FETs. International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria). . Vol. 1, no. 00 (Dec. 2011), pp.69-73.Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University.
https://search.emarefa.net/detail/BIM-367355
Modern Language Association (MLA)
Rechem, D.…[et al.]. Study of the performance of ballistic carbone nanotube FETs. . Oum el-Bouaghi Algeria : Larbi Ben M'hidi Oum el-Bouaghi University. 2011-12-31.
https://search.emarefa.net/detail/BIM-367355
American Medical Association (AMA)
Rechem, D.& Benkara, S.& Lamamra, K.. Study of the performance of ballistic carbone nanotube FETs. . International Conference on New Materials and Active Devices (1st : 2011 : Umm al-Bawaqi, Algeria).
https://search.emarefa.net/detail/BIM-367355