A comprehensive nonlinear model for GaAs MESFET transistor
Joint Authors
Zaabat, M.
Azizi, C.
Mellal, S.
Zir, T.
Qaddur, C.
Azizi, M.
Source
Journal of New Technology and Materials
Issue
Vol. 3, Issue 1 (30 Jun. 2013), pp.12-17, 6 p.
Publisher
Larbi Ben M'hidi Oum el-Bouaghi University
Publication Date
2013-06-30
Country of Publication
Algeria
No. of Pages
6
Main Subjects
Abstract EN
An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaAs MESFET based on (2D) analytical solution of Poisson’s equation using superposition principle is presented.
The results so obtained for current voltage characteristics, Transconductance and drain conductance, are presented and validated against both experimental I-V curves and various Models of the submicron MESFET GaAs.
The model is then extended to predict the effects of parasitic resistances Rs and Rd, carriers mobility according to the electric fields and the edges effects on the performance.
This model will allow more significant simulation of the component characteristics, with a precision improved for various conditions of Schottky barrier.
American Psychological Association (APA)
Mellal, S.& Azizi, C.& Zaabat, M.& Zir, T.& Qaddur, C.& Azizi, M.. 2013. A comprehensive nonlinear model for GaAs MESFET transistor. Journal of New Technology and Materials،Vol. 3, no. 1, pp.12-17.
https://search.emarefa.net/detail/BIM-367618
Modern Language Association (MLA)
Mellal, S.…[et al.]. A comprehensive nonlinear model for GaAs MESFET transistor. Journal of New Technology and Materials Vol. 3, no. 1 (2013), pp.12-17.
https://search.emarefa.net/detail/BIM-367618
American Medical Association (AMA)
Mellal, S.& Azizi, C.& Zaabat, M.& Zir, T.& Qaddur, C.& Azizi, M.. A comprehensive nonlinear model for GaAs MESFET transistor. Journal of New Technology and Materials. 2013. Vol. 3, no. 1, pp.12-17.
https://search.emarefa.net/detail/BIM-367618
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 17
Record ID
BIM-367618