Study the band energy structure and absorption coefficient for PbSe thin films

Abstract EN

The PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, the PbSe thin films prepared by thermal evaporation method and deposited at different substrate temperature (Ts) =R.T ,373 and 473K .

The thin films that deposited at room temperature (R.T=303)K was annealed at temperature, Ta= R.T, 373 and 473K .

By depended on D.C conductivity measurements calculated the density of state (DOS), The density of extended state N(Eext) increases with increasing the Ts and Ta, while the density of localized state N(Eloc) is decreased .

We investigated the absorption coefficient () that measurement from reflection and transmission spectrum result, and the effect of Ts and Ta on it , also we calculated the tail width for each prepared films.