The photoconductive properties of PbxSi1-x films
Other Title(s)
خصائص التوصيلية الضوئية لأغشية Pbs
Author
Source
Issue
Vol. 3, Issue 3 (30 Sep. 2006), pp.534-539, 6 p.
Publisher
University of Baghdad College of Science for Women
Publication Date
2006-09-30
Country of Publication
Iraq
No. of Pages
6
Main Subjects
Abstract EN
Polycrystalline PbxSi1-x photocond- uctive detectors with both value of x (0.50&0.53) were fabricated using vacuum evaporation technique at room temperature and under vacuum 10'6 mbar.
The thickness of films was 2.0 μm.
The structure of the films has been examined by x-ray diffraction .The detection properties’: [responsivity (Rx) , quantum efficiency(ᶯ),signal -to-noise ratio (S/N) detectivity (D*) and noise equivalent power (NEP)] have been measured for both value of x .It was found that the responsivity , ᶯ, D and S/N have increased while NEP decreased when the value of x increases from 0.50 to 0.53.
American Psychological Association (APA)
Adim, Kazim Abd al-Wahid. 2006. The photoconductive properties of PbxSi1-x films. Um-Salama Science Journal،Vol. 3, no. 3, pp.534-539.
https://search.emarefa.net/detail/BIM-368667
Modern Language Association (MLA)
Adim, Kazim Abd al-Wahid. The photoconductive properties of PbxSi1-x films. Um-Salama Science Journal Vol. 3, no. 3 (2006), pp.534-539.
https://search.emarefa.net/detail/BIM-368667
American Medical Association (AMA)
Adim, Kazim Abd al-Wahid. The photoconductive properties of PbxSi1-x films. Um-Salama Science Journal. 2006. Vol. 3, no. 3, pp.534-539.
https://search.emarefa.net/detail/BIM-368667
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references : p. 538
Record ID
BIM-368667