The photoconductive properties of PbxSi1-x films

Abstract EN

Polycrystalline PbxSi1-x photocond- uctive detectors with both value of x (0.50&0.53) were fabricated using vacuum evaporation technique at room temperature and under vacuum 10'6 mbar.

The thickness of films was 2.0 μm.

The structure of the films has been examined by x-ray diffraction .The detection properties’: [responsivity (Rx) , quantum efficiency(ᶯ),signal -to-noise ratio (S/N) detectivity (D*) and noise equivalent power (NEP)] have been measured for both value of x .It was found that the responsivity , ᶯ, D and S/N have increased while NEP decreased when the value of x increases from 0.50 to 0.53.