Deposited nanostructure Cds thin film by using pulse laser deposition technique for fabrication of heterojunction solar cell

Abstract EN

In the present study, nanostructure Cadmium sulfide (CdS) thin films on Si Ptype substrates heterojunction solar cell has been made by using a pulsed 532 nm Nd:YAG laser.

Deposition of films is achieved at 200 °C substrate temperatures and oxygen pressure 10-1 Torr.

X-ray diffraction (XRD), Scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-VIS transmittance analyses were employed to characterize thin films.

XRD measurements approved that CdS film is a hexagonal Wurtzite structure.

The morphology of deposited films were characterized by scanning electron microscope (SEM) and atomic force microscope (AFM), the grain size value (18) nm and rms roughness values are (12.6 nm) for thin films deposited at 200ºC.

UV-VIS transmittance measurements have shown that our films are highly transparent in the visible wavelength region, with an average transmittance of ~90% .

The direct optical band gap of the film has been found to be 2.2 eV.The photovoltaic characteristics included short circuit current (Jsc), open circuit voltage (Voc), where the maximum (Jsc) and (Voc)obtained at AM1 were 29.3 (mA cm-2) and 635(mV), respectively.

The fill factor (FF) was (0.44).

The fabricated cell exhibits good performance with 7.8 % conversion efficiency.