Effect of sputtering pressure and partial pressure on structural properties of TiO2 thin films

Abstract EN

Effect of sputtering pressure and partial pressure on structural properties of TiO2 films prepared using DC-sputtering to glass substrate was investigated.

Sputtering pressures are changed (1.8, 2.8, 3.8, 4.3 pa) at constant O2 / Ar Ratio (5 %).

Measurements reveal that the TiO2 films at the sputtering pressure 1.8 pa is amorphous, while at increasing pressure to 2.8 pa becomes crystalline with Rutile phase (110) and when we increase the pressure to 4.3 pa get crystalline structure with anatas phase ( 101).

Grain size is calculated per crystalline structure of the anatas and rutile (15.7) nm and (14.2) nm respectively.

For constant sputtering pressure (2.8pa) and changedO2 / Ar Ratio (10 %, 15 %, 20 %, 25 %, 30 %, 35 %),TiO2 thin films are a amorphous, except percentage (25 %) is crystalline with anatas phase (101) and with grain size (15.7 nm).