Surface area of porous silicon

Abstract EN

The surface area of porous silicon layers produced by different methods has been measured in this work.

It is found that the surface area of the porous silicon is optimum when high laser power density is used to etch n –type silicon wafer via the laser induced etching process compared with that for porous silicon produced by lower laser power density or by electrochemical etching process.

A scanning electron microscope (SEM) micrographs were used to estimate the surface area.

The surface area of the porous layer is strongly dependent on the porous layer geometry and its depth