The electrical characteristics of inverted coplanar field effect transistor doping with indium fabricated by spray pyrolsis technique (SPT)‎

Abstract EN

Inverted coplanar type field effect transistor has been fabricated using (SPT).

The electrical characteristic of the device which is investigated at room temperature and in the dark, show the characteristics increased in the source – drain current due to doping the CDS layer with indium.

The electrical characteristics were investigated through measuring output and transfer characteristics.

The result shows that device with low threshold voltage was corresponding to indium doped with concentration 0.05.The incremental of source-drain current due to IN general Indium dopant was found to to improve the electrical characteristics of the device compare with undoped one.