Electrical properties of the pseudo-binary alloys Al1-xSnxSe

Abstract EN

The electrical resistivity and Hall mobility of the pseudo-binary alloy of aluminum, tin, and selenium (Al02Sn08Se) with atomic compositions of 99/1, 98/2, and 97/3 have been investigated.

From the investigation, the specific resistivities of the alloys were found to be 3.87x 10"5,4.40x 10-5, and 4.65x 10"5 cm.

The Hall mobilities were found to decrease with increase in concentration of selenium in the alloy.

They have values of 2.5xlO3, 1.6xl03, and l.lxl03cm2/Vs.

The Hall coefficients were 0.097, 0.070, and 0.051 cm3/c for the various samples.

The positive values of the Hall coefficients show that the pseudobinary alloy is a p-type semiconductor.

The carrier concentrations were found to increase with increase in the concentration of selenium in the alloy.

Also, the variation of the electrical conductivity of the alloy with temperature has been studied.

The energy gaps of the alloys were obtained from the variation of the electrical conductivity with temperature and found to be 0.100, 0.112, and 0.184 eV.

These values which fall into the range of semiconductors (0.1-leV), further confirm that the investigated samples are semiconductors.