Theoretical models of electrical properties of ion implanted GaAs

Abstract EN

-A detailed study of the activation mechanisms for various implanted ions in GaAs has enabled a thermodynamic model to be developed which accurately predicts the electrical properties after rapid thermal annealing (RTA) this model describes the incorporation of impurities into GaAs and the kinetics of electrical activation which occur during the post -implant annealing .A thermodynamic-based analysis of the experimental data has resulted in an expression which yields two activation energies, therefore one is identified to be the dopants diffusion energy whereas the saturation energy is believed to be the necessary energy for the dissociation of dopants from a complex.

Furthermore the behaviour of most N type in GaAs follow the simple thermodynamic model .whereas a number of P type dopants proceed their activation mechanism in an interstitial form leading to an enhanced diffusion (e.g.

Zn ).