Theoritical calculation cathodoluminescence intensity in GaAs influence of surface and bulk physics parameters on the depletion region

Abstract EN

-A model of selfconsistent calculation of the depletion region at the free semiconductor surface under cathodic excitation is suggested.

The procedure used for such calculation has taken into account the influence of the electron beam parameters (energy E intensity Ip ).

The recombination of minority and majority carriers at the semiconductor surface is also examined within the Shochley-Read-Hall framework.

In addition, the continuity equations of both majority and minority’ carriers are solved in the neutral and depletion regions, in order to deduce in a selfconsistent way the carriers concentration, the barrier height, the depletion thickness and to obtain the cathodoluminescence intensity versus the beam parameters.

The numerical results show that the depletion region Zd depend on the intensity (Ip), the energy Eo, the energy level Et and the dijfusion length Ln.